| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,900 pcs
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5900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD9014PBF is a P-Channel power MOSFET from Vishay, designed for medium-power switching applications. It features a drain-source voltage rating of -60V and a continuous drain current of -1.1A at 25°C. The on-resistance is typically 500mΩ at Vgs = -10V. This device is part of Vishay's third-generation MOSFET family, offering fast switching and ruggedized performance. The 4-DIP (HVMDIP) package allows for through-hole mounting on standard 0.1-inch pin centers, with the dual drain serving as a thermal link for power dissipation up to 1.3W. The operating junction temperature range is -55°C to 175°C. The part is RoHS3 compliant and lead-free.
The drain-source voltage (Vdss) is -60V.
It comes in a 4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this is unverified. The datasheet indicates lead-free (Pb-free) termination.
The continuous drain current is -1.1A at Tc=25°C and -0.80A at Tc=100°C.
The maximum on-resistance is 500mΩ at Vgs=-10V and Id=-0.66A.
The total gate charge is 12nC at Vgs=10V, with gate-source charge of 3.8nC and gate-drain charge of 5.1nC.