IRFD320 IRFD320 is an N-Channel power MOSFET rated for 400V drain-source voltage and 490mA continuous drain current. It features a low on-resistance of 1.8 Ohm and is housed in a 4-DIP (HVMDIP) package.
Mfr Part #:

IRFD320

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFD320 is an N-Channel power MOSFET rated for 400V drain-source voltage and 490mA continuous drain current. It features a low on-resistance of 1.8 Ohm and is housed in a 4-DIP (HVMDIP) package.
✓ Total Stock: 291 pcs

IRFD320 Available from 1 distributor

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291 pcs
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IRFD320 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFD320 Description

Short technical summary and product information.

The IRFD320 is a 400V N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and high efficiency. It is part of the third generation power MOSFET family, offering a combination of rugged device design, low on-resistance, and cost-effectiveness.

 

Key electrical specifications include a maximum drain-source voltage of 400V, a continuous drain current of 490mA at 25°C (310mA at 100°C), and a pulsed drain current of 3.9A. The on-resistance is typically 1.8 Ohm at Vgs=10V, with a gate charge of 20 nC. The gate threshold voltage is 4V, and the input capacitance is 410 pF. The device is capable of single pulse avalanche energy up to 48 mJ.

 

Housed in a 4-DIP (0.300", 7.62mm) through-hole HVMDIP package, the IRFD320 is suitable for automatic insertion and can be stacked on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface, allowing power dissipation up to 1W. The operating temperature range is -55°C to 150°C (junction).

 

Common applications include switching power supplies, motor control, and general-purpose power switching circuits. The device is RoHS compliant and has an MSL rating of 1 (unlimited).

IRFD320 Quick Information

Product Type: MOSFET
Canonical Name: IRFD320 N-Channel Power MOSFET
Subcategory: Power MOSFET

IRFD320 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRFD320 Features

  • N-Channel MOSFET with 400V drain-source voltage.
  • Continuous drain current of 490mA at 25°C.
  • Low on-resistance of 1.8 Ohm typical.
  • Fast switching with 20 nC gate charge.
  • Through-hole 4-DIP (HVMDIP) package.

IRFD320 Applications

  • Used in high-voltage switching power supplies.
  • Suitable for motor control and driver circuits.
  • Applicable in power management systems.

IRFD320 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFD320?

The IRFD320 has a minimum drain-source breakdown voltage of 400 V.

What is the continuous drain current rating?

The continuous drain current is 490 mA at 25°C and 310 mA at 100°C.

What is the on-resistance of the IRFD320?

The maximum drain-source on-resistance is 1.8 Ohm at Vgs=10V.

What package is the IRFD320 available in?

The IRFD320 is housed in a 4-DIP (0.300", 7.62mm) through-hole package, also known as HVMDIP.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRFD320 RoHS compliant?

The IRFD320 is listed as RoHS3 compliant, but this status is unverified and should be treated as low confidence.

What is the gate charge of the IRFD320?

The maximum total gate charge is 20 nC at Vgs=10V.

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