| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD220PBF is an N-Channel power MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage of 200V and a continuous drain current of 800mA at 25°C ambient temperature. The device has a maximum on-resistance of 800mΩ at a gate-source voltage of 10V and a drain current of 480mA.
This MOSFET is designed for fast switching applications, with a maximum total gate charge of 14nC and an input capacitance of 260pF. It also offers a single pulse avalanche energy rating of 260mJaine and a peak diode recovery dV/dt of 5.0V/ns, making it suitable for rugged power switching environments.
The device is housed in a 4-DIP (0.300", 7.62mm) package with a supplier device package of 4-HVMDIP. It is designed for through-hole mounting and can be stacked on standard 0.1" pin centers, facilitating automatic insertion. The dual drain configuration provides a thermal link to the mounting surface, allowing power dissipation up to 1W at 25°C ambient.
The IRFD220PBF operates over a junction temperature range of -55°C to +150°C and is available in a lead (Pb)-free version. It is suitable for a variety of power switching and amplification applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 800mA at 25°C ambient temperature, and 500mA at 100°C.
The maximum on-resistance is 800mΩ at a gate-source voltage of 10V and a drain current of 480mA.
The operating junction temperature range is -55°C to +150°C.
The package is 4-DIP (0.300", 7.62mm) with a supplier device package of 4-HVMDIP.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.