| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,800 pcs
|
26800 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request | |
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD220 is a third-generation N-Channel Power MOSFET from Vishay, providing fast switching, ruggedized design, and low on-resistance. It features a drain-source breakdown voltage of 200V and a continuous drain current of 800mA at 25°C ambient temperature. The on-resistance is typically 800mΩ maximum at 10V gate drive with 480mA drain current. The device is rated for a maximum power dissipation of 1W at 25°C and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is designed for high-speed switching applications with fast dV/dt capability and repetitive avalanche rating. It has a total gate charge of 14nC, input capacitance of 260pF, and single pulse avalanche energy of 260mJ. The device is packaged in a 4-DIP through-hole package (4-HVMDIP) with dual drain serving as a thermal link to the mounting surface, enabling efficient heat dissipation.
Applications include power supplies, converters, motor control, and industrial automation where high-voltage switching and low drive requirements are needed. The part is also end stackable for multiple configurations on standard 0.1" pin centers.
The drain-source breakdown voltage is 200 V.
The package is a 4-DIP (0.300", 7.62mm) through-hole, with a supplier device package of 4-HVMDIP.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be treated as low-confidence.
The continuous drain current is 800 mA at 25°C ambient temperature and 500 mA at 100°C.
The maximum drain-source on-resistance is 800 mΩ at 480 mA drain current and 10 V gate-source voltage.