IRFD210 N-Channel MOSFET, 200V drain-source breakdown, 600mA continuous drain current, 1.5Ω on-resistance. Through-hole 4-DIP package.
Mfr Part #:

IRFD210

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET, 200V drain-source breakdown, 600mA continuous drain current, 1.5Ω on-resistance. Through-hole 4-DIP package.
✓ Total Stock: 93 pcs
$ Price Range: $1.19

IRFD210 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
93 pcs
93 pcs On Request 1 On Request On Request On Request On Request On Request

IRFD210 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRFD210 Description

Short technical summary and product information.

The IRFD210 is an N-Channel Power MOSFET from Vishay Siliconix, featuring a drain-source breakdown voltage of 200V and continuous drain current rating of 600mA at 25°C. With a maximum on-resistance of 1.5Ω at Vgs=10V and Id=360mA, it offers efficient switching performance. The device is designed for fast switching with a total gate charge of 8.2nC and includes dynamic dV/dt and repetitive avalanche ratings.

 

This MOSFET is housed in a through-hole 4-HVMDIP package (4-DIP, 0.300" lead spacing), supporting power dissipation up to 1W. It operates over a junction temperature range of -55°C to 150°C, making it suitable for industrial and automotive environments. The lead-free ordering option (IRFD210PbF) is available.

 

Typical applications include high-voltage switching, power supplies, and motor control circuits. The ruggedized design ensures reliability in demanding conditions.

IRFD210 Quick Information

Product Type: Power MOSFET
Canonical Name: IRFD210 N-Channel Power MOSFET
Subcategory: Single N-Channel MOSFET

IRFD210 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

IRFD210 Estimated Pricing

Qty Low High
2,500+ $1.19 $1.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFD210 Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 600mA.
  • Low on-resistance of 1.5Ω at 10V gate drive.
  • Through-hole 4-HVMDIP package.
  • Operating temperature range -55°C to 150°C.

IRFD210 Applications

  • Suitable for high-voltage switching applications.
  • Used in power supply and converter circuits.
  • Ideal for motor control and driver circuits.
  • Applicable in industrial automation systems.

IRFD210 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFD210?

The drain-source breakdown voltage is 200V (minimum).

What is the continuous drain current at 25°C?

The continuous drain current is 600mA maximum at Ta=25°C.

What is the on-resistance of the IRFD210?

The maximum drain-source on-resistance is 1.5Ω at Vgs=10V and Id=360mA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the IRFD210 available in?

The IRFD210 is available in a 4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP.

Is the IRFD210 RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified from the datasheet. The lead-free ordering option IRFD210PbF is confirmed lead-free.

What is the gate threshold voltage?

The gate threshold voltage ranges from 2V (minimum) to 4V (maximum) at Id=250µA.

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