| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD1Z3 is a small signal N-Channel MOSFET designed for switching and amplification applications. It has a maximum drain-source voltage of 60V and a continuous drain current rating of 400mA. The device features a low on-resistance of 3.2Ω maximum at 10V gate drive, ensuring efficient power handling. Key electrical characteristics include a gate charge of 3nC, input capacitance of 50pF, and a gate threshold voltage of 4V. The maximum power dissipation is 1W, and the operating junction temperature range is -55°C to 150°C. The MOSFET is packaged in a through-hole 4-DIP (0.300", 7.62mm) package, also known as Hexdip, making it suitable for prototyping and low-power circuit designs.
| Qty | Low | High |
|---|---|---|
| 395+ | $0.76 | $0.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The IRFD1Z3 is available in a through-hole 4-DIP (0.300", 7.62mm) package, also known as Hexdip.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified and low confidence.
The maximum on-resistance is 3.2Ω at Id=250mA and Vgs=10V.
The maximum gate charge is 3nC at Vgs=10V.
The continuous drain current is 400mA at Tc.