| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,196 pcs
|
11196 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
475 pcs
|
475 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
364 pcs
|
364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD120PBF is a third-generation N-Channel Power MOSFET from Vishay Siliconix, designed for fast switching and low on-resistance. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 1.3A at 25°C. The device has a maximum on-resistance (Rds(on)) of 270mΩ at Id=780mA and Vgs=10V, with a gate charge (Qg) of 16nC.
This MOSFET is housed in a 4-DIP (HVMDIP) through-hole package, suitable for automatic insertion and stackable on standard 0.1-inch pin centers. The dual drain provides a thermal link to the mounting surface, enabling power dissipation up to 1.3W. The device operates over a junction temperature range of -55°C to +175°C.
Key specifications include a gate threshold voltage (Vgs(th)) of 4V maximum, input capacitance (Ciss) of 360pF, and a single pulse avalanche energy rating of 100mJ. The device is designed for ease of paralleling and fast switching, making it suitable for various power management applications.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 100V.
The continuous drain current (Id) is 1.3A at Ta=25°C.
It is available in a 4-DIP (HVMDIP) through-hole package.
The operating junction temperature range is -55°C to +175°C.
RoHS3 Compliant (low confidence, unverified).
Maximum on-resistance (Rds(on)) is 270mΩ at Id=780mA and Vgs=10V.
Maximum gate charge (Qg) is 16nC at Vgs=10V.