LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFD120 is a third-generation N-Channel Power MOSFET manufactured by N-A. It offers a combination of fast switching speeds, a ruggedized device design, and low on-resistance, making it a cost-effective solution for various applications.
Key electrical specifications include a Drain-Source Voltage (VDS) of 100V and a Gate-Source Voltage (VGS) of ±20V. The typical Drain-Source On-State Resistance (RDS(on)) is 0.27 Ohms at VGS = 10V and ID = 0.78A. It also features a typical forward transconductance (gfs) of 0.80 S at VDS = 50V and ID = 0.78A.
This MOSFET is housed in a HEXDIP package, which is a low-cost, machine-insertable case style. The dual drain serves as a thermal link to the mounting surface, allowing for power dissipation up to 1W. The operating junction and storage temperature range is -55°C to +175°C.
Designed for automatic insertion and end-stackable configurations, the IRFD120 is suitable for applications requiring reliable power switching and efficient thermal management.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is 100V.
The typical Gate-Source Threshold Voltage is 2.0V.
The typical Drain-Source On-State Resistance is 0.27 Ohms.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFD120 is supplied in a HEXDIP package.
