Mfr Part #:

IRFD120

Mfr Name: Vishay

IRFD120 is a 100V N-Channel power MOSFET from Vishay Dale with a continuous drain current of 1.3A and low on-resistance of 270mOhm. It comes in a 4-DIP through-hole package.

✓ Total Stock: 6,869 pcs

IRFD120 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	6,000 pcs On Request	6000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	720 pcs On Request	720 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	149 pcs On Request	149 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFD120 Description

Short technical summary and product information.

The IRFD120 is a 100V N-Channel power MOSFET from Vishay, designed for medium-power switching applications. It features a maximum continuous drain current of 1.3A at 25°C ambient temperature and a low on-resistance of 270mOhm at Vgs=10V. The gate charge is 16nC and input capacitance is 360pF, enabling efficient switching performance. The device is avalanche rated with a single pulse energy of 100mJ and repetitive avalanche capability. The maximum power dissipation is 1.3W at 25°C. The operating junction temperature range is -55°C to 175°C. The MOSFET is housed in a 4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP, which supports automatic insertion and stacking on standard 0.1" pin centers. This part is suitable for power management, DC-DC converters, motor drives, and other general-purpose switching circuits.

IRFD120 Quick Information

Product Type: MOSFET (Metal Oxide)

Canonical Name: IRFD120 N-Channel Power MOSFET 100V 1.3A 4-DIP

Subcategory: Power MOSFET

IRFD120 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFD120 Features

100V drain-source voltage rating.
1.3A continuous drain current capability.
Low on-resistance of 270 mOhm.
Avalanche rated for rugged operation.
Through-hole 4-DIP package for easy assembly.

IRFD120 Applications

Ideal for low-power DC-DC converters.
Suitable for motor driver circuits.
Used in power management systems.
Applicable in high-speed switching applications.

IRFD120 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IRFD120?

100V.

What package does the IRFD120 come in?

4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP.

What is the operating junction temperature range?

-55°C to 175°C.

Is the IRFD120 RoHS compliant?

According to available data, it is marked as RoHS3 compliant, but this status is unverified and low confidence.

What is the gate charge of the IRFD120?

16 nC at Vgs=10V.

What is the input capacitance of the IRFD120?

360 pF at Vds=25V.

What is the single pulse avalanche energy rating?

100 mJ under the condition Vdd=25V, Tj=25°C, L=22mH, Rg=25Ω, Ias=2.6A.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	1.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds	360 pF
Lead Spacing	2.54 mm
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	270 mΩ
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	4-HVMDIP
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Termination Style	Through Hole
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2V ~ 4V