BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| SVHC Present |
The Vishay Siliconix IRFD110PBF is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1A at 25°C. The on-resistance (Rds On) is specified as a maximum of 540mOhm at 600mA and 10V gate drive voltage.
This MOSFET has a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-to-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is a maximum of 180pF at 25V. The device has a power dissipation rating of 1.3W (Ta) and operates across a wide temperature range of -55°C to 175°C (TJ).
The IRFD110PBF is packaged in a 4-DIP (0.300" | 7.62mm) case and utilizes a through-hole mounting type. It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 1A at 25°C.
The maximum on-resistance (Rds On) is 540mOhm at 600mA and 10V.
The operating temperature range is -55°C to 175°C.
It is supplied in a 4-DIP (0.300" | 7.62mm) package.
It is mounted using the through-hole method.