| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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88 pcs
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88 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IRFD110PBF is an N-Channel MOSFET manufactured by Vishay Siliconix. It is designed for applications requiring a Drain-Source Voltage (Vdss) of up to 100V and can handle a continuous drain current (Id) of 1A at 25°C.
Key electrical characteristics include a maximum On-Resistance (Rds On) of 540mOhm at 600mA and 10V gate-source voltage, a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum gate charge (Qg) of 8.3 nC at 10V. The input capacitance (Ciss) is a maximum of 180 pF at 25V.
This MOSFET features a maximum power dissipation of 1.3W at ambient temperature. It operates within a wide temperature range of -55°C to 175°C (TJ). The component is housed in a 4-HVMDIP package and is designed for through-hole mounting.
Environmental compliance includes RoHS3 compliance and Moisture Sensitivity Level 1. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain to Source Voltage (Vdss) for the IRFD110PBF is 100 V.
The continuous drain current (Id) at 25°C for the IRFD110PBF is 1 A.
The maximum Rds On for the IRFD110PBF is 540 mOhm at 600mA drain current and 10V gate-source voltage.
The operating temperature range for the IRFD110PBF is -55°C to 175°C.
The IRFD110PBF is supplied in a 4-HVMDIP package, which is a 4-DIP (0.300" | 7.62mm) case.
The IRFD110PBF is designed for through-hole mounting.