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IRFD110 N-Channel Power MOSFET, 100V drain-source voltage, 1A continuous drain current. Features 0.54 Ohm on-resistance and 4-DIP through-hole package.
Mfr Part #:

IRFD110

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel Power MOSFET, 100V drain-source voltage, 1A continuous drain current. Features 0.54 Ohm on-resistance and 4-DIP through-hole package.
✓ Total Stock: 102 pcs

IRFD110 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Partservice ✓
Non-Authorised Inventory information
90 pcs
On Request
90 pcs On Request 1 On Request On Request On Request On Request On Request
Chanetech ✓
Non-Authorised Inventory information
12 pcs
On Request
12 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRFD110 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFD110 Description

Short technical summary and product information.

The IRFD110 is a third-generation N-Channel Power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It offers a drain-source breakdown voltage of 100V and continuous drain current of 1A at 25°C, with a maximum on-resistance of 540 mOhm at 10V gate drive. The device features a total gate charge of 8.3 nC and input capacitance of 180 pF, enabling efficient switching. It is rated for a maximum power dissipation of 1.3W at 25°C and operates over a junction temperature range of -55°C to 175°C. The 4-DIP (HVMDIP) package supports through-hole mounting and is suitable for automatic insertion. The part is also available in lead (Pb)-free version (IRFD110PbF).

IRFD110 Quick Information

Product Type: Power MOSFET
Series: IRFD110
Canonical Name: IRFD110 Power MOSFET, N-Channel, 100V, 1A, 4-DIP
Subcategory: N-Channel MOSFET

IRFD110 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFD110 Features

  • 100V drain-source breakdown voltage.
  • 1A continuous drain current at 25°C.
  • 540 mOhm on-resistance at 10V gate drive.
  • Through-hole 4-DIP package.
  • Operating temperature up to 175°C.

IRFD110 Applications

  • Suitable for high-speed switching applications.
  • Used in power management circuits.
  • Ideal for DC-DC converters and motor control.
  • Can be stacked on standard 0.1" pin centers.

IRFD110 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRFD110?

The drain-source breakdown voltage is 100V minimum.

What is the continuous drain current rating?

The continuous drain current is 1A at 25°C ambient temperature and 0.71A at 100°C.

What is the on-resistance of the IRFD110?

The maximum on-resistance is 540 mOhm at Vgs=10V, Id=600mA.

What package is the IRFD110 available in?

The IRFD110 is available in a 4-DIP (0.300", 7.62mm) through-hole package, also known as HVMDIP.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRFD110 RoHS compliant?

The available data indicates RoHS3 compliant, but this information is unverified and has low confidence. Please verify with the manufacturer.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4V at Id=250µA.

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