| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,850 pcs
|
11850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
122 pcs
|
122 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD110 is an N-Channel power MOSFET designed for low-power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 1.0A at 25°C (0.71A at 100°C). The maximum on-resistance is 540mΩ at Vgs=10V, ensuring efficient operation. This device is built with third-generation MOSFET technology from Vishay Siliconix, offering fast switching, ruggedized design, and low on-resistance. It is avalanche rated and supports repetitive avalanche energy up to 0.13mJ. The gate charge total is 8.3nC, and input capacitance is 180pF. The IRFD110 is housed in a 4-DIP (0.300", 7.62mm) through-hole package, also known as HVMDIP or Hexdip. The dual drain serves as a thermal link to the mounting surface, allowing power dissipation up to 1.3W at 25°C. The operating junction temperature range is -55°C to 175°C. This component is suitable for automatic insertion and can be stacked on standard 0.1" pin centers.
-55°C to 175°C (junction).
4-DIP (0.300", 7.62mm) also known as HVMDIP or Hexdip.
RoHS3 Compliant (unverified).
100V.
1.0A at 25°C, 0.71A at 100°C.
540mΩ maximum at Vgs=10V, Id=0.60A.
8.3nC total at Vgs=10V.