IRFD024 IRFD024 is an N-Channel power MOSFET from Vishay Dale with 60V drain-source voltage and 2.5A continuous drain current. It features low on-resistance of 100mΩ and is housed in a 4-DIP through-hole package.
Mfr Part #:

IRFD024

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFD024 is an N-Channel power MOSFET from Vishay Dale with 60V drain-source voltage and 2.5A continuous drain current. It features low on-resistance of 100mΩ and is housed in a 4-DIP through-hole package.
✓ Total Stock: 69 pcs

IRFD024 Available from 1 distributor

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IRFD024 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFD024 Description

Short technical summary and product information.

The IRFD024 is a third-generation N-Channel power MOSFET manufactured by Vishay Siliconix. It is designed for applications requiring fast switching, ruggedness, and low on-resistance. The device offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 2.5A at 25°C, with a maximum pulsed drain current of 20A. The on-resistance (Rds(on)) is typically 100mΩ at Vgs=10V and Id=1.5A.

 

The MOSFET features a gate threshold voltage range of 2.0V to 4.0V and a total gate charge of 25nC, enabling efficient drive. It is rated for a maximum power dissipation of 1.3W at 25°C ambient and can operate over a junction temperature range of -55°C to 175°C. The device also includes a single pulse avalanche energy rating of 91mJ and a peak diode recovery dV/dt of 4.5V/ns.

 

The IRFD024 is supplied in a 4-pin HVMDIP (4-DIP) through-hole package with a 0.300-inch (7.62mm) lead pitch. The dual drain pins provide a thermal path to the mounting surface, allowing power dissipation up to 1W. The package is designed for automatic insertion and can be stacked on standard 0.1-inch pin centers.

IRFD024 Quick Information

Product Type: Power MOSFET
Canonical Name: IRFD024 N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFD024 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes (PbF suffix)

IRFD024 Features

  • N-Channel MOSFET with 60V drain-source voltage
  • Continuous drain current of 2.5A at 25°C
  • Low on-resistance of 100mΩ at 10V Vgs
  • Fast switching with 25nC total gate charge
  • Through-hole 4-DIP package for automatic insertion

IRFD024 Applications

  • Used in power supply switching circuits
  • Ideal for DC-DC converter designs
  • Suitable for motor control applications
  • Applicable in load switching and relay drivers

IRFD024 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFD024?

The maximum drain-source voltage (Vds) is 60V.

What is the continuous drain current rating of the IRFD024?

The continuous drain current (Id) is 2.5A at 25°C ambient with Vgs=10V.

What is the on-resistance of the IRFD024?

The maximum on-resistance (Rds(on)) is 100mΩ at Vgs=10V and Id=1.5A.

What package does the IRFD024 come in?

The IRFD024 is available in a 4-DIP (0.300", 7.62mm) through-hole package, also known as HVMDIP.

What is the operating temperature range of the IRFD024?

The operating junction temperature range is -55°C to 175°C.

Is the IRFD024 RoHS compliant?

The IRFD024PbF version is lead-free (PbF suffix), but RoHS compliance is unverified from the datasheet.

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