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IRFD020PBF IRFD020PBF is an N-Channel power MOSFET from Vishay featuring 50V drain-source voltage, 2.4A continuous drain current, and 100mΩ on-resistance at 10V gate drive.
Mfr Part #:

IRFD020PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
IRFD020PBF is an N-Channel power MOSFET from Vishay featuring 50V drain-source voltage, 2.4A continuous drain current, and 100mΩ on-resistance at 10V gate drive.
✓ Total Stock: 4,342 pcs

IRFD020PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,042 pcs
On Request
3042 pcs On Request 1 On Request On Request 06+ On Request On Request
Partservice ✓
Non-Authorised Inventory information
1,300 pcs
On Request
1300 pcs On Request 1 On Request On Request On Request On Request On Request
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IRFD020PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFD020PBF Description

Short technical summary and product information.

The IRFD020PBF is an N-Channel enhancement-mode power MOSFET designed for through-hole mounting in applications requiring efficient switching and low on-resistance. With a maximum drain-source voltage of 50V and continuous drain current rating of 2.4A at 25°C case temperature, this device delivers 100mΩ maximum on-resistance when driven with 10V gate-source voltage.

 

The HVMDIP package features a compact 4-pin dual-in-line format compatible with automatic insertion equipment. The device exhibits fast switching characteristics with 24nC typical total gate charge and 400pF input capacitance. Operating junction temperature range spans -55°C to +150°C, with maximum power dissipation of 1W at 25°C case temperature.

IRFD020PBF Quick Information

Product Type: MOSFET
Canonical Name: IRFD020PBF N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRFD020PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFD020PBF Features

  • N-Channel power MOSFET with 50V drain-source voltage.
  • 2.4A continuous drain current at 25°C case temperature.
  • Low on-resistance of 100mΩ at 10V gate drive.
  • Fast switching with 24nC typical gate charge.
  • Through-hole HVMDIP package for automatic insertion.

IRFD020PBF Applications

  • Suitable for DC-DC converter circuits.
  • Used in power supply switching applications.
  • Ideal for motor drive control systems.
  • Applicable in load switching and routing.

IRFD020PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IRFD020PBF?

The maximum drain-source voltage (Vds) is 50 V.

What is the continuous drain current rating of the IRFD020PBF?

The continuous drain current is 2.4 A at Tc=25°C and 1.5 A at Tc=100°C.

What is the on-resistance of the IRFD020PBF?

The on-resistance (Rds(on)) is 100 mΩ maximum at Vgs=10V and Id=1.4A.

What is the package type of the IRFD020PBF?

The package is 4-DIP (0.300", 7.62mm) through-hole, also known as 4-HVMDIP.

What is the operating temperature range for the IRFD020PBF?

The operating junction temperature range is -55°C to +150°C.

What is the gate threshold voltage of the IRFD020PBF?

The gate threshold voltage (Vgs(th)) ranges from 2.0V to 4.0V at Id=250µA.

Is the IRFD020PBF RoHS compliant?

RoHS3 compliance is indicated but unverified. The lead-free (PbF) suffix suggests RoHS compliance.

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