| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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397 pcs
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397 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRFD020 is an N-Channel Power MOSFET utilizing HVMDIP technology for efficient geometry and processing. This device is designed for automatic insertion, making it suitable for high-volume applications in computers, printers, telecommunications equipment, and consumer products. Its compact, end-stackable HVMDIP package is compatible with automatic PC board insertion equipment.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 50V and a low On-Resistance (RDS(on)) of 0.10 Ω at a Gate-Source Voltage (VGS) of 10V. The continuous drain current is rated at 2.4A at 25°C and 1.5A at 100°C. It also features a Gate Charge (Qg) of 24nC (max).
The MOSFET offers excellent temperature stability and ruggedness. The operating junction and storage temperature range is from -55°C to +150°C. The device is packaged in a 4-pin dual-in-line package (HVMDIP) suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the IRFD020 is 50V.
The On-Resistance (RDS(on)) of the IRFD020 at VGS = 10V is 0.1Ω.
The continuous drain current for the IRFD020 at 25°C is 2.4A.
The IRFD020 MOSFET is supplied in the HVMDIP package.
The operating junction and storage temperature range for the IRFD020 is -55°C to +150°C.