| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD014 is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.7A at 25°C. The device features a maximum on-resistance (Rds(on)) of 200mΩ at a gate drive of 10V, ensuring efficient power handling.
This MOSFET is optimized for applications requiring fast switching and simple drive requirements. It includes a dynamic dV/dt rating and is capable of operating at junction temperatures up to 175°C. The total gate charge (Qg) is a maximum of 11nC, contributing to reduced switching losses.
The IRFD014 is packaged in a 4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP. This package is designed for automatic insertion and can be stacked on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface, allowing for power dissipation up to 1.3W.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $1.19 | $1.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRFD014 has a maximum drain-source voltage (Vdss) of 60V.
The continuous drain current (Id) is 1.7A at 25°C with a gate-source voltage of 10V.
The maximum on-resistance (Rds(on)) is 200mΩ at a drain current of 1A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The IRFD014 is available in a through-hole 4-DIP (0.300", 7.62mm) package, also known as 4-HVMDIP.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA.
The maximum total gate charge (Qg) is 11nC at a gate-source voltage of 10V.