IRFD010 The IRFD010 is an N-channel MOSFET from Vishay Dale. It features a 50V drain-source voltage rating, 1.7A continuous drain current, and 200mΩ on-resistance, housed in a 4-DIP package.
Mfr Part #:

IRFD010

Available from 1 distributors
Mfr Name: Vishay
Vishay
The IRFD010 is an N-channel MOSFET from Vishay Dale. It features a 50V drain-source voltage rating, 1.7A continuous drain current, and 200mΩ on-resistance, housed in a 4-DIP package.
✓ Total Stock: 5,183 pcs
$ Price Range: $1.19

IRFD010 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,183 pcs
5183 pcs On Request 1 On Request On Request 94+ On Request On Request

IRFD010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFD010 Description

Short technical summary and product information.

The IRFD010 is a single N-channel MOSFET manufactured by Vishay Dale, designed for low-power switching applications. It supports a maximum drain-source voltage of 50V and a continuous drain current of 1.7A. The device features a maximum on-resistance of 200mΩ at 10V gate drive and 860mA drain current, enabling low-voltage switching. The gate threshold voltage is specified at a maximum of 4V, making it compatible with 10V gate drive levels.

 

The IRFD010 offers a maximum power dissipation of 1W at case temperature, with an operating junction temperature range from -55°C to 150°C. Its input capacitance is 250pF at 25V, and total gate charge is 13nC at 10V, providing moderate switching performance for low-frequency applications. The device comes in a 4-DIP (0.300", 7.62mm) through-hole package, also known as the 4-HVMDIP supplier package, suitable for conventional PCB assembly and prototyping.

 

This N-channel MOSFET is RoHS3 compliant and has an MSL rating of 1 (unlimited) as well as REACH unaffected status. With its 50V drain-source rating, 1.7A current capability, and through-hole form factor, the IRFD010 can be used in through-hole designs requiring a discrete MOSFET.

IRFD010 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET 50V 1.7A 4-DIP
Subcategory: Single N-Channel MOSFET

IRFD010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFD010 Estimated Pricing

Qty Low High
2,500+ $1.19 $1.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFD010 Features

  • N-Channel MOSFET, 50V drain-source voltage.
  • 1.7A continuous drain current capability.
  • 200mΩ on-resistance with 10V gate drive.
  • Operates from -55°C to 150°C.
  • 4-DIP through-hole package for simple assembly.

IRFD010 Applications

  • Use in low-power switching circuits.
  • Switch DC loads up to 50V.
  • Through-hole mounting for prototype PCBs.
  • Compatible with 10V gate drive logic.

IRFD010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRFD010?

The maximum drain-to-source voltage (Vds) is 50V.

What package is the IRFD010 available in?

The IRFD010 is offered in a 4-DIP (0.300", 7.62mm) through-hole package, with supplier device package 4-HVMDIP.

What is the operating temperature range of the IRFD010?

The IRFD010 operates over a junction temperature range of -55°C to 150°C.

Is the IRFD010 RoHS compliant?

Yes, the IRFD010 is specified as RoHS3 compliant in the product data.

What is the maximum drain current rating?

The maximum continuous drain current is 1.7A at case temperature.

What is the drain-source on-resistance at 10V gate drive?

The maximum on-resistance is 200mΩ at 860mA drain current and 10V gate drive.

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±20V.

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