| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBG20PBF is an N-Channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 1000V and a continuous drain current of 1.4A at 25°C case temperature. The device offers a maximum on-resistance of 11 Ohms at 10V gate drive, with a total gate charge of 38 nC for efficient switching. The MOSFET is housed in a TO-220AB through-hole package, suitable for power dissipation up to 54W. It is RoHS compliant and lead-free (PbF suffix). This device is ideal for applications requiring high voltage capability and ruggedness, such as power supplies and inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.22 | $2.22 |
| 10+ | $1.77 | $1.77 |
| 100+ | $1.24 | $1.24 |
| 500+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1000V.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 150°C junction temperature.
Yes, it is RoHS3 compliant.
38 nC at 10V.
1.4A at Tc=25°C.
200 mJ.