| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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710 pcs
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710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRFBG20 is an N-Channel MOSFET designed for power electronic applications. It features a high breakdown voltage of 1000V and a continuous drain current rating of 1.4A.
Key electrical characteristics include a maximum on-state resistance (RDS(on)) of 11Ω and a gate threshold voltage of 4V. The MOSFET also offers a rise time of 17ns and a fall time of 31ns, contributing to efficient switching performance.
Packaged in a standard TO-220AB through-hole configuration, the IRFBG20 is suitable for various mounting requirements. Its operating temperature range spans from -55°C to 150°C, providing robustness in different environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFBG20 is 1000V.
The continuous drain current rating for the IRFBG20 is 1.4A.
The maximum power dissipation of the IRFBG20 is 54W.
The maximum on-state resistance (RDS(on)) for the IRFBG20 is 11Ω.
The gate threshold voltage of the IRFBG20 is 4V.
The operating temperature range for the IRFBG20 is -55°C to 150°C.
The IRFBG20 is available in a TO-220AB package.