| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,745 pcs
|
8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBF30SPBF is an N-Channel power MOSFET designed for high-voltage switching applications. It features a maximum drain-source voltage of 900V and a continuous drain current of 3.6A at 25°C case temperature. The device offers a maximum on-resistance of 3.7 Ohms at Vgs = 10V and Id = 2.2A.
This MOSFET is built with third-generation MOSFET technology providing fast switching and rugged device design. It includes repetitive avalanche rating and dynamic dV/dt rating for enhanced reliability in demanding applications. The gate charge is 78 nC maximum at Vgs = 10V.
The device is housed in a surface-mount D2PAK (TO-263) package which offers low thermal resistance and cost-effectiveness for power dissipation levels up to approximately 50W. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 900V.
The continuous drain current is 3.6A at Tc = 25°C and 2.3A at Tc = 100°C.
The device is available in a surface mount D2PAK (TO-263) package.
The operating junction temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and should be treated as low confidence.