IRFBF30PBF N-Channel power MOSFET with 900V drain-source voltage and 3.6A continuous drain current. Housed in a TO-220AB through-hole package.
Mfr Part #:

IRFBF30PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET with 900V drain-source voltage and 3.6A continuous drain current. Housed in a TO-220AB through-hole package.
✓ Total Stock: 906 pcs
$ Price Range: $1.42 - $4.02

IRFBF30PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
806 pcs
806 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request 18+ On Request On Request

IRFBF30PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFBF30PBF Description

Short technical summary and product information.

The IRFBF30PBF is an N-Channel power MOSFET from Vishay's third generation family, designed for high-voltage switching applications. It features a drain-source voltage rating of 900V and a continuous drain current of 3.6A at Tc=25°C (2.3A at Tc=100°C). The device offers a low on-resistance of 3.7 Ohm maximum at Vgs=10V and Id=2.2A, with a total gate charge of 78 nC for efficient switching.

 

This MOSFET is housed in a TO-220AB through-hole package, which provides low thermal resistance and is widely used in commercial and industrial applications. The operating junction temperature range is -55°C to 150°C, and the device is rated for a maximum power dissipation of 125W at Tc=25°C. Additional features include repetitive avalanche rating and dynamic dV/dt capability.

 

Typical applications include high-voltage power supplies, switching converters, motor control circuits, and lighting ballasts. The part is available in lead-free and halogen-free versions as indicated by the PbF suffix.

IRFBF30PBF Quick Information

Product Type: MOSFET
Canonical Name: IRFBF30PBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFBF30PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFBF30PBF Estimated Pricing

Qty Low High
1+ $4.02 $4.02
10+ $2.03 $2.03
100+ $1.46 $1.46
1,000+ $1.42 $1.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFBF30PBF Features

  • 900V drain-source voltage rating.
  • 3.6A continuous drain current at 25°C.
  • Low on-resistance of 3.7 Ohm.
  • Fast switching with 78nC gate charge.
  • TO-220AB through-hole package.

IRFBF30PBF Applications

  • Used in high-voltage power supplies.
  • Suitable for switching converters.
  • Ideal for motor control circuits.
  • Applicable in lighting ballasts.

IRFBF30PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

900V.

What is the continuous drain current?

3.6A at Tc=25°C, 2.3A at Tc=100°C.

What is the package type?

TO-220-3 (TO-220AB).

What is the operating junction temperature range?

-55°C to 150°C.

Is the device RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

4V maximum at Id=250µA.

What is the on-resistance?

3.7 Ohm maximum at Id=2.2A, Vgs=10V.

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