| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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136 pcs
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136 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFBF30 is an N-Channel Power MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source voltage of 900V and a continuous drain current of 3.6A at 25°C case temperature. The device has a low on-resistance of 3.7 ohms at 10V gate drive, ensuring efficient power handling.
This MOSFET is built with third-generation technology, offering fast switching and ruggedized performance. It is avalanche rated with a single pulse avalanche energy of 250 mJ, making it suitable for inductive load applications. The gate charge is 78 nC, and input capacitance is 1200 pF, allowing for moderate drive requirements.
The IRFBF30 is housed in a TO-220AB package, which is a through-hole mounting type. The package offers low thermal resistance, with a maximum power dissipation of 125W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C.
Typical applications include switch-mode power supplies, motor controls, and other high-voltage circuits. The device is lead-free and RoHS compliant per the datasheet, though compliance status should be verified with the manufacturer.
900V maximum.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 150°C junction temperature.
The datasheet indicates lead-free version, but RoHS compliance is unverified. The part is listed as RoHS3 compliant with low confidence.
3.6A at 25°C case temperature.
3.7 ohms maximum at Vgs=10V and Id=2.2A.
78 nC maximum at Vgs=10V.