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IRFBF20 IRFBF20 is an N-Channel Power MOSFET from Vishay Siliconix with a drain-source voltage of 900V and continuous drain current of 1.7A. It features a maximum on-resistance of 8.0Ω and is housed in a TO-220AB package.
Mfr Part #:

IRFBF20

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFBF20 is an N-Channel Power MOSFET from Vishay Siliconix with a drain-source voltage of 900V and continuous drain current of 1.7A. It features a maximum on-resistance of 8.0Ω and is housed in a TO-220AB package.
✓ Total Stock: 50 pcs

IRFBF20 Available from 1 distributor

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IRFBF20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFBF20 Description

Short technical summary and product information.

The IRFBF20 is a third-generation N-Channel Power MOSFET from Vishay Siliconix, designed for fast switching and ruggedized performance. It offers a drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 1.7A at 25°C, with a maximum on-resistance (Rds(on)) of 8.0Ω at Vgs = 10V. The device supports repetitive avalanche energy up to 5.4 mJ and a peak diode recovery dV/dt of 1.5 V/ns.

 

The MOSFET is housed in a TO-220AB package, which is widely used for commercial and industrial applications requiring power dissipation up to approximately 50W. The package offers low thermal resistance (junction-to-case 2.3°C/W) and is suitable for through-hole mounting. The operating junction temperature range is -55°C to +150°C.

 

Typical applications include switching power supplies, motor controls, inverters, and other power conversion circuits where high voltage and fast switching are required. The device is available in lead (Pb)-free (IRFBF20PbF) and lead-free plus halogen-free (IRFBF20PbF-BE3) ordering options.

IRFBF20 Quick Information

Product Type: Power MOSFET
Canonical Name: IRFBF20 N-Channel Power MOSFET, 900V, 1.7A, TO-220AB
Subcategory: Single MOSFET

IRFBF20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 (Unlimited)
REACH Status: REACH Unaffected

IRFBF20 Features

  • N-Channel Power MOSFET with 900V drain-source voltage.
  • Continuous drain current rated at 1.7A at 25°C.
  • Maximum on-resistance of 8.0Ω at Vgs = 10V.
  • Fast switching with typical gate charge of 38 nC.
  • TO-220AB package for through-hole mounting.

IRFBF20 Applications

  • Ideal for high-voltage switching power supplies.
  • Used in motor control and inverter circuits.
  • Suitable for power conversion and DC-DC converters.
  • Applicable in industrial and commercial power systems.

IRFBF20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFBF20?

The maximum drain-source voltage (Vds) is 900V.

What is the continuous drain current rating of the IRFBF20?

The continuous drain current (Id) is 1.7A at Tc = 25°C and 1.1A at Tc = 100°C.

What is the on-resistance of the IRFBF20?

The maximum on-resistance (Rds(on)) is 8.0Ω at Vgs = 10V and Id = 1A.

What package is the IRFBF20 available in?

The IRFBF20 is available in a TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range of the IRFBF20?

The operating junction temperature range is -55°C to +150°C.

Is the IRFBF20 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified. The datasheet mentions both RoHS and non-RoHS parts are available.

What is the maximum power dissipation of the IRFBF20?

The maximum power dissipation is 54W at Tc = 25°C.

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