IRFBE30S IRFBE30S is an 800V, 4.1A N-Channel MOSFET in a D2PAK surface-mount package. It features 3Ω maximum on-resistance and 125W power dissipation.
Mfr Part #:

IRFBE30S

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFBE30S is an 800V, 4.1A N-Channel MOSFET in a D2PAK surface-mount package. It features 3Ω maximum on-resistance and 125W power dissipation.
✓ Total Stock: 392 pcs
$ Price Range: $3.41

IRFBE30S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
392 pcs
392 pcs On Request 1 On Request On Request N/A On Request On Request

IRFBE30S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFBE30S Description

Short technical summary and product information.

The IRFBE30S is an N-Channel enhancement-mode MOSFET designed for high-voltage power switching. It is rated for a drain-to-source voltage of 800V and a continuous drain current of 4.1A at a case temperature of 25°C. The device has a maximum on-resistance of 3Ω at Vgs=10V and Id=2.5A, a gate charge of 78nC at Vgs=10V, and an input capacitance of 1300pF at Vds=25V.

 

The MOSFET accepts a gate-source voltage range of ±20V and has a maximum threshold voltage of 4V at Id=250µA. Maximum power dissipation is 125W at case temperature. It is specified for an operating junction temperature range of -55°C to 150°C.

 

The IRFBE30S is supplied in a TO-263-3 D2PAK surface-mount package (supplier package D2PAK TO-263). With an 800V rating and 4.1A current capability, it suits high-voltage switching applications such as power supplies and power factor correction. The part is listed as RoHS3 compliant in available product data.

IRFBE30S Quick Information

Product Type: Power MOSFET
Canonical Name: IRFBE30S N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IRFBE30S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

IRFBE30S Estimated Pricing

Qty Low High
1,000+ $3.41 $3.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFBE30S Features

  • 800V drain-to-source voltage rating.
  • 4.1A continuous drain current capability.
  • 3Ω maximum on-resistance at 10V gate drive.
  • 125W maximum power dissipation rating.
  • Available in D2PAK surface-mount package.

IRFBE30S Applications

  • Used for high-voltage switching circuits.
  • Ideal for switch-mode power supplies.
  • Suitable for power factor correction stages.
  • Applies to high-voltage DC-DC converters.

IRFBE30S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRFBE30S?

The maximum drain-to-source voltage is 800V.

What is the maximum continuous drain current?

4.1A at 25°C case temperature.

What is the on-resistance of the IRFBE30S?

Maximum on-resistance is 3Ω at Vgs=10V and Id=2.5A.

What package is the IRFBE30S available in?

It is available in a TO-263-3 D2PAK surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IRFBE30S RoHS compliant?

It is listed as RoHS3 compliant in existing product data, but this status is not independently verified.

What is the maximum power dissipation?

125W at case temperature.

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