IRFBE30PBF IRFBE30PBF is an N-Channel power MOSFET from Vishay Siliconix with 800V drain-source voltage and 4.1A continuous drain current. It features a low on-resistance of 3 Ohm and is housed in a TO-220AB package.
Mfr Part #:

IRFBE30PBF

Available from 7 distributors
Mfr Name: Vishay
Vishay
IRFBE30PBF is an N-Channel power MOSFET from Vishay Siliconix with 800V drain-source voltage and 4.1A continuous drain current. It features a low on-resistance of 3 Ohm and is housed in a TO-220AB package.
✓ Total Stock: 64,751 pcs
$ Price Range: $1.41 - $2.83

IRFBE30PBF Available from 7 distributors

✓ Authorised
✓ Non-Authorised

IRFBE30PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFBE30PBF Description

Short technical summary and product information.

The IRFBE30PBF is an N-Channel enhancement-mode power MOSFET designed for high-voltage switching applications. It offers a drain-source voltage rating of 800V and a continuous drain current of 4.1A at 25°C, making it suitable for power conversion and control circuits.

 

Key electrical characteristics include a maximum on-resistance of 3 Ohm at Vgs=10V, a total gate charge of 78 nC, and an input capacitance of 1300 pF. The device is rated for repetitive avalanche energy and features a dynamic dV/dt rating for robust performance in demanding environments.

 

The MOSFET is packaged in the industry-standard TO-220AB through-hole package, which provides low thermal resistance and ease of mounting. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 125W.

IRFBE30PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFBE30PBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFBE30PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFBE30PBF Estimated Pricing

Qty Low High
1+ $2.83 $2.83
10+ $1.90 $1.90
100+ $1.56 $1.56
500+ $1.41 $1.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFBE30PBF Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • Continuous drain current of 4.1A at 25°C.
  • Low on-resistance of 3 Ohm at 10V gate drive.
  • Rated for repetitive avalanche energy and dynamic dV/dt.
  • Through-hole TO-220AB package for easy mounting.

IRFBE30PBF Applications

  • Ideal for high-voltage power supply circuits.
  • Used in motor control and inverter applications.
  • Suitable for DC-DC converters and battery chargers.
  • Applicable in industrial power switching systems.

IRFBE30PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFBE30PBF?

The maximum drain-source voltage (Vdss) is 800V.

What is the continuous drain current rating of the IRFBE30PBF?

The continuous drain current is 4.1A at Tc=25°C and 2.6A at Tc=100°C.

What is the on-resistance of the IRFBE30PBF?

The maximum on-resistance (Rds(on)) is 3 Ohm at Id=2.5A and Vgs=10V.

What package does the IRFBE30PBF come in?

The IRFBE30PBF is available in a TO-220AB through-hole package.

What is the operating temperature range of the IRFBE30PBF?

The operating junction temperature range is -55°C to 150°C.

Is the IRFBE30PBF RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the gate charge of the IRFBE30PBF?

The maximum total gate charge (Qg) is 78 nC at Vgs=10V.

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