IRFBE30LPBF N-Channel MOSFET from Vishay Dale with 800V drain-source voltage, 4.1A continuous drain current, and 3 Ohm on-resistance in a through-hole I2PAK package.
Mfr Part #:

IRFBE30LPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET from Vishay Dale with 800V drain-source voltage, 4.1A continuous drain current, and 3 Ohm on-resistance in a through-hole I2PAK package.
✓ Total Stock: 979 pcs
$ Price Range: $1.34 - $3.79

IRFBE30LPBF Available from 1 distributor

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✓ Non-Authorised
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IRFBE30LPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFBE30LPBF Description

Short technical summary and product information.

The IRFBE30LPBF is an N-Channel power MOSFET manufactured by Vishay Dale. It features a drain-to-source voltage rating of 800V and a continuous drain current of 4.1A at 25°C case temperature. The device has a maximum on-resistance of 3 Ohms at a gate-source voltage of 10V and a drain current of 2.5A.

 

This MOSFET uses standard gate drive voltage of 10V and can withstand a maximum gate-source voltage of ±20V. The total gate charge is 78 nC at 10V, and the input capacitance is 1300 pF at 25V drain-source voltage. Maximum power dissipation is 125W at case temperature.

 

The device is housed in a through-hole TO-262-3 package with long leads, also known as I2PAK or TO-262AA. It operates over a junction temperature range of -55°C to 150°C.

IRFBE30LPBF Quick Information

Product Type: MOSFET
Canonical Name: IRFBE30LPBF
Subcategory: Single N-Channel

IRFBE30LPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFBE30LPBF Estimated Pricing

Qty Low High
1+ $3.79 $3.79
10+ $1.85 $1.85
100+ $1.60 $1.60
500+ $1.41 $1.41
1,000+ $1.40 $1.40
2,000+ $1.34 $1.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFBE30LPBF Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • Continuous drain current of 4.1A at 25°C.
  • Maximum on-resistance of 3 Ohms at 10V Vgs.
  • Through-hole I2PAK (TO-262) package.
  • Operating temperature range -55°C to 150°C.

IRFBE30LPBF Applications

  • High-voltage power switching circuits.
  • DC-DC converters and inverters.
  • Motor control and power supplies.
  • Industrial and automotive applications.

IRFBE30LPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFBE30LPBF?

The drain-to-source voltage (Vdss) is 800V.

What is the continuous drain current of this MOSFET?

The continuous drain current (Id) at 25°C case temperature is 4.1A.

What is the on-resistance of the IRFBE30LPBF?

The maximum on-resistance (Rds on) is 3 Ohms at Id = 2.5A and Vgs = 10V.

What package does the IRFBE30LPBF come in?

It comes in a through-hole TO-262-3 Long Leads, I²Pak, TO-262AA package (supplier device package I2PAK).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRFBE30LPBF RoHS compliant?

The part is listed as RoHS3 compliant, though this is unverified.

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