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53 pcs
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53 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRFBE30 is a third-generation N-Channel Power MOSFET designed for commercial and industrial applications. It offers a robust combination of fast switching speeds, a ruggedized device design, and low on-resistance.
Key electrical specifications include a drain-source breakdown voltage of 800V, a maximum continuous drain current of 4.1A at 25°C, and a maximum on-resistance of 3Ω at a gate-source voltage of 10V. The device also features a maximum power dissipation of 125W at 25°C and a wide operating junction temperature range from -55°C to +150°C.
Packaged in the universally preferred TO-220AB package, the IRFBE30 is suitable for power dissipation levels up to approximately 50W. Its low thermal resistance and package cost contribute to its widespread industry acceptance. The MOSFET is compliant with RoHS Directive 2002/95/EC.
This component is well-suited for applications requiring high voltage switching and efficient power handling. Its features like dynamic dV/dt rating and repetitive avalanche rating make it a reliable choice for demanding power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 800V.
The maximum continuous drain current at 25°C is 4.1A.
The maximum on-resistance is 3Ω when the gate-source voltage is 10V.
The IRFBE30 comes in a TO-220AB package.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFBE30 is RoHS3 compliant.