IRFBE30 IRFBE30 is an N-Channel power MOSFET from Vishay Dale with 800V drain-source voltage and 4.1A continuous drain current. It features a maximum on-resistance of 3 Ohm at 10V gate drive and is housed in a TO-220AB package.
Mfr Part #:

IRFBE30

Available from 3 distributors
Mfr Name: Vishay
Vishay
IRFBE30 is an N-Channel power MOSFET from Vishay Dale with 800V drain-source voltage and 4.1A continuous drain current. It features a maximum on-resistance of 3 Ohm at 10V gate drive and is housed in a TO-220AB package.
✓ Total Stock: 2,490 pcs

IRFBE30 Available from 3 distributors

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488 pcs
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IRFBE30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFBE30 Description

Short technical summary and product information.

The IRFBE30 is an N-Channel power MOSFET manufactured by Vishay Dale. It is designed for high-voltage switching applications with a maximum drain-source voltage of 800V and continuous drain current of 4.1A at 25°C case temperature. The device features a maximum on-resistance of 3 Ohm at Vgs=10V and Id=2.5A, ensuring efficient conduction. With a maximum power dissipation of 125W, it is suitable for moderate power levels.

 

The MOSFET is built with third-generation power MOSFET technology, providing fast switching and ruggedness. It includes repetitive avalanche energy rating of 13 mJ and single pulse avalanche energy of 260 mJ. The gate charge is 78 nC at 10V, allowing for simple drive requirements.

 

The device is housed in a TO-220AB through-hole package, which offers low thermal resistance (junction-to-case 1.0°C/W) and is widely used in commercial and industrial applications. The operating junction temperature range is -55°C to 150°C. The IRFBE30 is available in RoHS-compliant and non-RoHS variants; the specific part number suffix indicates compliance.

IRFBE30 Quick Information

Product Type: Power MOSFET
Series: IRFBE30
Canonical Name: IRFBE30 N-Channel Power MOSFET, 800V, 4.1A, TO-220AB
Subcategory: N-Channel MOSFET

IRFBE30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IRFBE30 Features

  • 800V drain-source voltage rating.
  • 4.1A continuous drain current.
  • 3 Ohm maximum on-resistance at 10V.
  • TO-220AB through-hole package.
  • Avalanche rated for rugged operation.

IRFBE30 Applications

  • Used in switch mode power supplies.
  • Ideal for high-voltage motor controls.
  • Suitable for power inverters.
  • Applicable in industrial power systems.

IRFBE30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFBE30?

800V.

What package is the IRFBE30 available in?

TO-220-3 (TO-220AB).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the IRFBE30 RoHS compliant?

The part is listed as RoHS3 Compliant, but this is unverified. The datasheet indicates both RoHS and non-RoHS variants exist.

What is the maximum continuous drain current?

4.1A at Tc=25°C.

What is the maximum on-resistance?

3 Ohm at Vgs=10V, Id=2.5A.

What is the gate charge?

78 nC at Vgs=10V.

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