| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 95 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBC42R is an N-Channel enhancement-mode power MOSFET manufactured by Harris Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications. Key electrical ratings include a maximum drain-source voltage of 600V, a continuous drain current of 5.4A at case temperature (Tc), and a maximum power dissipation of 125W at Tc.
This device features a maximum drain-source on-resistance (Rds(on)) of 1.6 Ohms at Id=3.4A and Vgs=10V, with a typical gate threshold voltage of 4V at Id=250µA. Input capacitance is 1300pF at Vds=25V, and total gate charge (Qg) is 60nC at Vgs=10V. The operating junction temperature range is -55°C to +150°C.
The MOSFET is supplied in a standard TO-220-3 through-hole package (supplier device package TO-220), suitable for PCB mounting. This package offers good thermal performance for power dissipation.
| Qty | Low | High |
|---|---|---|
| 50+ | $1.66 | $1.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 5.4A at case temperature (Tc).
The device is offered in a TO-220-3 through-hole package (supplier device package TO-220).
The operating junction temperature range is -55°C to +150°C.
RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.
The maximum power dissipation is 125W at case temperature (Tc).
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.