| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBC40LC is an N-Channel power MOSFET from Vishay Dale (Vishay Siliconix). It features a drain-source voltage of 600V, continuous drain current of 6.2A at 25°C, and a maximum on-resistance of 1.2 Ohm at 10V gate drive. The device utilizes low charge technology to reduce gate drive requirements and switching losses. It is designed for high-frequency switching applications such as power supplies and motor controllers. The MOSFET is housed in a through-hole TO-220AB package, suitable for PCB mounting. It is rated for repetitive avalanche and has a maximum power dissipation of 125W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $4.69 | $4.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V maximum.
6.2 A at Tc = 25°C, and 3.9 A at Tc = 100°C.
TO-220-3 (TO-220AB) through-hole package.
Junction temperature range of -55°C to 150°C.
Based on the datasheet, the IRFBC40LC (SnPb termination) is not Pb-free. The RoHS-compliant version is the IRFBC40LCPbF.
Maximum total gate charge of 39 nC at Vgs = 10 V.
125 W at Tc = 25°C, derating linearly at 1.0 W/°C.