| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,245 pcs
|
5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBC40A is an N-Channel enhancement mode power MOSFET designed for high voltage, high speed switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 6.2A at 25°C. The device offers a low on-resistance of 1.2 Ohm maximum at Vgs=10V and a gate charge of 42 nC, enabling efficient drive requirements.
This MOSFET is characterized for avalanche ruggedness with a single pulse avalanche energy rating of 570 mJ and repetitive avalanche current of 6.2A. It is suitable for switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and high speed power switching circuits.
The IRFBC40A is housed in a TO-220-3 package with a TO-220AB supplier device package, featuring through-hole mounting for easy integration into power circuits. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 125W at case temperature 25°C.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $2.39 | $2.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRFBC40A is available in a TO-220-3 package with supplier device package TO-220AB.
The operating junction temperature range is -55°C to 150°C.
The datasheet indicates compliance to RoHS Directive 2002/95/EC for the Pb-free version, but the SnPb version (IRFBC40A) is not lead-free and is not RoHS compliant.
600V.
6.2A.
Maximum 4V at Id=250µA.
Maximum 42 nC at Vgs=10V.