| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBC40 is an N-Channel power MOSFET designed for high-voltage switching applications. It offers a drain-source breakdown voltage of 600V and a continuous drain current of 6.2A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 1.2 Ohm at 3.7A and 10V gate drive. The gate charge is typically 60 nC at 10V, and input capacitance is 1300 pF at 25V drain-source. The device is avalanche rated with single pulse avalanche energy of 570 mJ and repetitive avalanche energy of 13 mJ.
The MOSFET is housed in a TO-220-3 (TO-220AB) through-hole package. Maximum power dissipation is 125W at 25°C case temperature, and the operating junction temperature range is -55°C to 150°C.
Typical applications include switching power supplies, motor controls, and DC-DC converters where high voltage and moderate current handling are required. The fast switching and rugged design make it suitable for industrial and commercial power systems.
600V.
6.2A at 25°C case temperature.
Maximum 1.2 Ohm at 3.7A and 10V gate drive.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 150°C junction temperature.
The database indicates RoHS3 compliant, but this is unverified and a distributor indicates non-RoHS.
Typical 60 nC at 10V gate drive.