| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBC30A is an N-Channel power MOSFET from Vishay designed for high-voltage switching applications. It features a drain-source breakdown voltage of 600V and a continuous drain current rating of 3.6A at 25°C, making it suitable for switch mode power supplies and high-speed power switching circuits.
This MOSFET offers a maximum drain-source on-resistance of 2.2Ω at Vgs=10V and Id=2.2A, with a maximum gate charge of 23 nC at 10V. It is characterized for avalanche ruggedness with a single pulse avalanche energy rating of 290 mJ and a repetitive avalanche current of 3.6A.
The device is housed in a standard TO-220AB through-hole package, providing efficient thermal management with a junction-to-case thermal resistance of 1.7°C/W. It operates over a junction temperature range of -55°C to +150°C.
The drain-source voltage rating is 600 V.
The continuous drain current at Tc=25°C is 3.6 A.
The maximum drain-source on-resistance is 2.2 Ω at Vgs=10V and Id=2.2A.
The IRFBC30A is available in a TO-220-3 through-hole package (TO-220AB).
The operating junction temperature range is -55°C to +150°C.
The maximum gate charge is 23 nC at Vgs=10V.
The maximum thermal resistance junction-to-case is 1.7 °C/W.