| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBC30 is an N-Channel power MOSFET manufactured by Vishay Dale (datasheet references Vishay Siliconix). It is designed for high-voltage switching applications up to 600V and 3.6A continuous drain current. The device features a maximum on-resistance of 2.2Ω at 10V gate drive, with a total gate charge of 31nC. The MOSFET is capable of repetitive avalanche energy up to 7.4mJ and single pulse avalanche energy of 290mJ. It comes in the industry-standard TO-220AB through-hole package, offering low thermal resistance for power dissipation up to 74W. The operating junction temperature range is -55°C to 150°C. With its fast switching characteristics and rugged design, it is suitable for various power conversion and motor control applications.
The maximum drain-source voltage is 600 V.
The IRFBC30 is available in a TO-220-3 package (TO-220AB).
The operating junction temperature range is -55°C to +150°C.
The IRFBC30 is listed as RoHS3 Compliant.
The maximum drain-source on-resistance is 2.2 Ω at Id = 2.2 A and Vgs = 10 V.
The maximum total gate charge is 31 nC at Vgs = 10 V.
The single pulse avalanche energy is 290 mJ, and repetitive avalanche energy is 7.4 mJ.