Mfr Part #:

IRFBC20SPBF

Mfr Name: Vishay

This Vishay N-Channel MOSFET is rated for 600V drain-source breakdown and 2.2A continuous drain current. Offered in a surface-mount D2PAK (TO-263) package.

✓ Total Stock: 113,490 pcs

$ Price Range: $1.37 - $3.85

IRFBC20SPBF Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	113,000 pcs On Request	113000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	490 pcs On Request	490 pcs	On Request	1	On Request	On Request	09+	On Request	On Request

IRFBC20SPBF Description

Short technical summary and product information.

The IRFBC20SPBF is an N-Channel power MOSFET from Vishay, featuring a drain-source breakdown voltage of 600V and a maximum continuous drain current of 2.2A. It utilizes MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.

Key electrical characteristics include a maximum on-state resistance of 4.4 Ohms at Vgs=10V and Id=1.3A, a gate threshold voltage of 4V at Id=250µA, and a maximum gate charge of 18 nC at Vgs=10V. The device can dissipate up to 50W at case temperature (Tc) and 3.1W at ambient (Ta). Input capacitance is rated at 350 pF at Vds=25V.

The component is housed in a surface-mount D²PAK (TO-263) package, with a supplier device package of D²PAK (TO-263). It operates over a junction temperature range of -55°C to +150°C, making it suitable for demanding environments.

IRFBC20SPBF Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale IRFBC20SPBF N-Channel MOSFET

Subcategory: N-Channel MOSFET

IRFBC20SPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFBC20SPBF Estimated Pricing

Qty	Low	High
1+	$3.85	$3.85
10+	$2.09	$2.09
100+	$1.57	$1.57
500+	$1.37	$1.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFBC20SPBF Features

N-Channel MOSFET rated at 600V drain-source.
2.2A continuous drain current capability.
Surface mount D²PAK (TO-263) package.
Maximum on-resistance of 4.4 Ohm at 10V drive.
Wide operating junction temperature -55°C to 150°C.

IRFBC20SPBF Applications

High voltage DC-DC converter circuits.
Switch mode power supplies (SMPS).
Power management in industrial equipment.
Motor drive and control applications.

IRFBC20SPBF FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IRFBC20SPBF?

The drain-source breakdown voltage (Vdss) is 600V minimum.

What is the maximum drain current of this MOSFET?

The maximum continuous drain current (Id) is 2.2A at case temperature (Tc).

What is the on-resistance (Rds on) of the IRFBC20SPBF?

The maximum on-resistance is 4.4 Ohms at Vgs=10V and Id=1.3A.

What package does the IRFBC20SPBF come in?

It is available in a surface-mount TO-263-3 (D²Pak, D²PAK) package.

What is the operating temperature range of the IRFBC20SPBF?

The junction temperature range is -55°C to +150°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	2.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	350 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	4.4 Ohm
Supplier Device Package	D²PAK (TO-263)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V