IRFBC20PBF IRFBC20PBF is an N-channel power MOSFET from Vishay Dale. It features a 600V drain-source breakdown voltage and 2.2A continuous drain current in a TO-220AB through-hole package.
Mfr Part #:

IRFBC20PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
IRFBC20PBF is an N-channel power MOSFET from Vishay Dale. It features a 600V drain-source breakdown voltage and 2.2A continuous drain current in a TO-220AB through-hole package.
✓ Total Stock: 18,606 pcs
$ Price Range: $0.51 - $2.06

IRFBC20PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,020 pcs
18020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
586 pcs
586 pcs On Request 1 On Request On Request 14+ On Request On Request

IRFBC20PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFBC20PBF Description

Short technical summary and product information.

The IRFBC20PBF is an N-Channel power MOSFET manufactured by Vishay Dale. It is designed for high-voltage switching applications with a maximum drain-to-source voltage (Vdss) of 600V and continuous drain current of 2.2A at case temperature (Tc). The device offers a low on-resistance (Rds on) of 4.4 ohms maximum at 1.3A gate drive voltage of 10V.

 

This MOSFET uses standard gate threshold voltage (Vgs(th)) of up to 4V at 250µA drain current. It can handle a maximum power dissipation of 50W at case temperature. The device is rated for junction temperature range from -55°C to 150°C.

 

The part is housed in a TO-220-3 package (supplier device package TO-220AB) with through-hole mounting. It has a maximum input capacitance of 350 pF at Vds=25V and total gate charge of 18 nC at Vgs=10V, making it suitable for moderate-speed switching applications. The maximum gate-source voltage is ±20V.

IRFBC20PBF Quick Information

Product Type: MOSFET
Canonical Name: IRFBC20PBF N-Channel MOSFET
Subcategory: Power MOSFET

IRFBC20PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFBC20PBF Estimated Pricing

Qty Low High
1+ $2.06 $2.06
10+ $1.18 $1.18
100+ $0.87 $0.87
500+ $0.69 $0.69
1,000+ $0.62 $0.62
2,000+ $0.55 $0.55
5,000+ $0.53 $0.53
10,000+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFBC20PBF Features

  • N-channel MOSFET with 600V drain-source voltage.
  • 2.2A continuous drain current rating.
  • Maximum on-resistance of 4.4 ohms.
  • Through-hole TO-220AB package.
  • Wide junction temp range -55°C to 150°C.

IRFBC20PBF Applications

  • Suitable for high-voltage switching circuits.
  • Used in power supply and converter designs.
  • Applicable for motor control applications.
  • Ideal for general-purpose power management.

IRFBC20PBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current at case temperature is 2.2A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the package type?

The device is available in a TO-220-3 package, supplier device package TO-220AB, through-hole mounting.

Is it RoHS compliant?

RoHS3 compliance is indicated but unverified.

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