| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The IRFBC20 is an N-Channel power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 2.2A at 25°C case temperature, with a pulsed drain current rating of 8.0A. The device has a maximum on-resistance of 4.4 ohms at a gate-source voltage of 10V and a drain current of 1.3A.
This MOSFET offers fast switching performance, with a maximum gate charge of 18nC and typical gate-drain charge of 8.9nC. It is avalanche rated, with a single pulse avalanche energy of 84mJ and repetitive avalanche energy of 5.0mJ, making it suitable for rugged applications. The device operates over a junction temperature range of -55°C to 150°C and can dissipate up to 50W at 25°C case temperature.
The IRFBC20 is housed in a TO-220AB package, which is widely used in commercial and industrial applications. The through-hole mounting type facilitates easy PCB assembly and thermal management. This MOSFET is suitable for power supply, motor control, and other high-voltage switching circuits.
The maximum drain-source voltage is 600V.
The continuous drain current is 2.2A at 25°C case temperature and 1.4A at 100°C.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 4.4 ohms at a gate-source voltage of 10V and drain current of 1.3A.
The IRFBC20 is available in a TO-220AB through-hole package.
The IRFBC20 is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.