| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,900 pcs
|
3900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB9N65APBF is an N-Channel enhancement-mode power MOSFET manufactured by Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 8.5A at Tc=25°C, with a pulsed drain current capability of 21A.
The device offers a low on-state resistance (Rds(on)) of 930 mOhm maximum at Vgs=10V and Id=5.1A, contributing to efficient power conversion. The total gate charge (Qg) is 48 nC at Vgs=10V, with a gate-drain (Miller) charge of 19 nC, enabling fast switching performance.
The MOSFET is rated for a maximum power dissipation of 167W at Tc=25°C and operates over a junction temperature range of -55°C to +150°C. It is packaged in a TO-220AB (TO-220-3) through-hole package, suitable for PCB mounting with a standard 10V gate drive voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.85 | $2.85 |
| 10+ | $2.56 | $2.56 |
| 100+ | $2.09 | $2.09 |
| 500+ | $1.78 | $1.78 |
| 1,000+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 650V.
The continuous drain current is 8.5A at Tc=25°C and 5.4A at Tc=100°C.
It comes in a TO-220-3 (TO-220AB) through-hole package.
The operating junction temperature range is -55°C to +150°C.
The part number suffix PbF suggests lead-free construction, but RoHS compliance is unverified from the datasheet.
The maximum on-state resistance (Rds(on)) is 930 mOhm at Vgs=10V and Id=5.1A.
The gate threshold voltage (Vgs(th)) ranges from 2.0V to 4.0V at Id=250µA.