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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRFB9N60A is a high-performance N-Channel Power MOSFET designed for various power switching applications. It features a breakdown voltage of 600V and a continuous current rating of 9.2A, making it suitable for demanding tasks.
The MOSFET exhibits a maximum on-resistance (RDS(on)) of 750mΩ and a threshold voltage of 4V. It also includes specifications for input capacitance, rise time, and fall time, providing essential electrical characteristics for circuit design.
Packaged in the industry-standard TO-220AB through-hole configuration, the IRFB9N60A is designed for easy integration into printed circuit boards. Its operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 170W, ensuring reliability under various thermal conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFB9N60A is 600V.
The continuous current rating for the IRFB9N60A is 9.2A.
The maximum on-resistance (RDS(on)) of the IRFB9N60A is 750mΩ.
The threshold voltage of the IRFB9N60A is 4V.
The input capacitance of the IRFB9N60A is 1.4nF.
The IRFB9N60A operates within a temperature range of -55°C to 150°C.
The IRFB9N60A is supplied in a TO-220AB package.