IRFB9N30A IRFB9N30A is a 300V, 9.3A N-Channel power MOSFET by Vishay in a TO-220AB package. Features low on-resistance of 450mΩ and fast switching.
Mfr Part #:

IRFB9N30A

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFB9N30A is a 300V, 9.3A N-Channel power MOSFET by Vishay in a TO-220AB package. Features low on-resistance of 450mΩ and fast switching.
✓ Total Stock: 92 pcs
$ Price Range: $1.16

IRFB9N30A Available from 1 distributor

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IRFB9N30A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB9N30A Description

Short technical summary and product information.

The IRFB9N30A is a third-generation N-Channel Power MOSFET from Vishay, designed for applications requiring high efficiency, fast switching, and rugged performance. It features a maximum drain-source voltage (Vdss) of 300V and a continuous drain current of 9.3A at 25°C case temperature, with a peak pulsed drain current rating of 37A.

 

The device has a maximum on-resistance (Rds(on)) of 450mΩ at Vgs=10V and Id=5.6A, ensuring low conduction losses. Gate charge is 33nC, input capacitance is 920pF, and it supports repetitive avalanche energy up to 9.6mJ, making it suitable for inductive load switching.

 

Packaged in a standard TO-220-3 (TO-220AB) through-hole package, it offers a maximum power dissipation of 96W at 25°C. The junction-to-case thermal resistance is 1.3°C/W, allowing for effective heat sinking in power supply and motor control circuits.

IRFB9N30A Quick Information

Product Type: Single N-Channel Power MOSFET
Series: IRFB9N30A
Canonical Name: IRFB9N30A Power MOSFET, N-Channel, 300V, 9.3A, TO-220AB
Subcategory: Single Power MOSFET

IRFB9N30A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRFB9N30A Estimated Pricing

Qty Low High
50+ $1.16 $1.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB9N30A Features

  • N-Channel MOSFET rated at 300V drain-source.
  • Continuous drain current of 9.3A at 25°C.
  • Low on-resistance of 450mΩ at 10V gate drive.
  • Fast switching with 33nC gate charge.
  • Through-hole TO-220AB package for easy mounting.

IRFB9N30A Applications

  • Used in switching power supplies and converters.
  • Ideal for motor control and drive circuits.
  • Suitable for high-voltage DC-DC converters.
  • Applicable in battery charging and management systems.
  • Used in general-purpose power switching applications.

IRFB9N30A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the IRFB9N30A?

The maximum drain-source voltage is 300V.

What is the continuous drain current rating of the IRFB9N30A?

The continuous drain current is 9.3A at Tc=25°C and 5.9A at Tc=100°C.

What is the on-resistance (Rds(on)) of the IRFB9N30A?

The maximum on-resistance is 450mΩ at Id=5.6A and Vgs=10V.

What package does the IRFB9N30A come in?

It comes in a through-hole TO-220-3 (TO-220AB) package.

What is the operating temperature range of the IRFB9N30A?

The operating junction temperature range is -55°C to 150°C.

Is the IRFB9N30A RoHS compliant?

It is reported as RoHS3 Compliant, but the datasheet notes that Pb-containing terminations are not RoHS compliant; exemptions may apply. Verify with manufacturer for exact status.

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