SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The Vishay Dale IRFB7787PBF is a HEXFET Power MOSFET designed for various applications including motor drives, battery powered circuits, and DC/DC converters. It features a Drain-to-Source Breakdown Voltage of 75V and a typical On-Resistance of 6.9mΩ at 10V Gate-to-Source voltage and 46A drain current.
This MOSFET offers improved gate, avalanche, and dynamic dV/dt ruggedness, along with fully characterized capacitance and Avalanche SOA. The continuous drain current is rated at 76A at 25°C case temperature and 54A at 100°C case temperature. The maximum power dissipation is 125W at 25°C case temperature.
The IRFB7787PBF is available in a TO-220AB package, suitable for through-hole mounting. It operates within a junction and storage temperature range of -55 to +175°C. The component is lead-free and RoHS compliant.
Key electrical characteristics include a Gate Threshold Voltage typically between 2.1V and 3.7V, and leakage currents of 1µA (Vds=75V, Vgs=0V) and 150µA at 125°C. The part also exhibits enhanced body diode dV/dt and dI/dt capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage is 75V.
The typical Static Drain-to-Source On-Resistance is 6.9mΩ at Vgs = 10V and Id = 46A.
The maximum continuous drain current is 76A at a case temperature of 25°C with Vgs at 10V.
The IRFB7787PBF is supplied in a TO-220AB package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.