IRFB7537PBF The Infineon IRFB7537PBF is an N-channel Power MOSFET designed for various motor drive and power conversion applications. It offers a 60V breakdown voltage and low on-resistance.
Mfr Part #:

IRFB7537PBF

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IRFB7537PBF is an N-channel Power MOSFET designed for various motor drive and power conversion applications. It offers a 60V breakdown voltage and low on-resistance.
✓ Total Stock: 9,596 pcs
$ Price Range: $3.05

IRFB7537PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,858 pcs
7858 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,738 pcs
1738 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB7537PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRFB7537PBF Description

Short technical summary and product information.

The Infineon IRFB7537PBF is a StrongIRFET™ HEXFET® Power MOSFET designed for demanding applications such as brushed and BLDC motor drives, battery-powered circuits, and DC/DC converters. It features a 60V drain-to-source breakdown voltage and a low typical on-resistance of 2.75mΩ at 100A. The continuous drain current is rated at 173A at 25°C case temperature.

 

This MOSFET is characterized by its improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability. It is suitable for half-bridge and full-bridge topologies, synchronous rectifier applications, and resonant mode power supplies.

 

The IRFB7537PBF comes in a TO-220AB package, designed for through-hole mounting. It operates within a junction and storage temperature range of -55°C to +175°C. The part is lead-free and RoHS compliant.

 

Key electrical parameters include a gate-to-source voltage range of ±20V and a maximum power dissipation of 230W at 25°C case temperature. Thermal resistance from junction-to-case is 0.65°C/W, and junction-to-ambient is 62°C/W for the TO-220 package.

IRFB7537PBF Quick Information

Product Type: MOSFET
Series: HEXFET®
Canonical Name: Infineon IRFB7537PBF N-channel Power MOSFET
Subcategory: N-Channel

IRFB7537PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB7537PBF Estimated Pricing

Qty Low High
1+ $3.05 $3.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB7537PBF Features

  • 60V drain-to-source breakdown voltage.
  • Low 2.75mΩ typical on-resistance.
  • High 173A continuous drain current.
  • TO-220AB package for through-hole mounting.
  • Improved gate and avalanche ruggedness.

IRFB7537PBF Applications

  • Brushed motor drive applications.
  • BLDC motor drive applications.
  • Battery powered circuits.
  • Half-bridge and full-bridge topologies.
  • Synchronous rectifier applications.

IRFB7537PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IRFB7537PBF?

The maximum continuous drain current is 173A at 25°C case temperature with VGS at 10V.

What is the breakdown voltage of the IRFB7537PBF MOSFET?

The drain-to-source breakdown voltage is 60V.

What is the typical on-resistance of the IRFB7537PBF?

The typical on-resistance is 2.75mΩ when measured at VGS = 10V and ID = 100A.

What is the operating temperature range for the IRFB7537PBF?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the IRFB7537PBF available in?

The IRFB7537PBF is available in the TO-220AB package.

Is the IRFB7537PBF RoHS compliant?

Yes, the IRFB7537PBF is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRFB7537PBF?

The Moisture Sensitivity Level is 1.

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