IRFB7440PBF N-Channel MOSFET with 40V drain-source breakdown voltage and 120A continuous drain current. Packaged in a through-hole TO-220AB case.
Mfr Part #:

IRFB7440PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 40V drain-source breakdown voltage and 120A continuous drain current. Packaged in a through-hole TO-220AB case.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.73 - $2.44

IRFB7440PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 17+ On Request On Request

IRFB7440PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB7440PBF Description

Short technical summary and product information.

The IRFB7440PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-to-source voltage (Vdss) of 40V and a continuous drain current of 120A, limited by the package. The device offers a typical on-resistance of 2.0mΩ and a maximum of 2.5mΩ at Vgs=10V and Id=100A.

 

This MOSFET is designed for applications requiring high efficiency and ruggedness, including brushed and BLDC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectification, and DC/DC converters. It is characterized for enhanced avalanche and dynamic dv/dt ruggedness.

 

The device is mounted using through-hole technology and is supplied in a TO-220-3 package (TO-220AB). It is RoHS compliant, lead-free, and halogen-free. The operating junction temperature range is -55°C to 175°C.

IRFB7440PBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: Infineon Technologies IRFB7440PBF N-Channel MOSFET, 40V, 120A, TO-220AB
Subcategory: Single N-Channel

IRFB7440PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB7440PBF Estimated Pricing

Qty Low High
1+ $2.44 $2.44
10+ $1.57 $1.57
100+ $1.07 $1.07
500+ $0.85 $0.85
1,000+ $0.78 $0.78
2,000+ $0.73 $0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB7440PBF Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • 120A continuous drain current (package limited).
  • Low typical on-resistance of 2.0mΩ.
  • Through-hole TO-220AB package for easy mounting.
  • RoHS compliant, lead-free, and halogen-free.

IRFB7440PBF Applications

  • Ideal for brushed and BLDC motor drives.
  • Used in battery-powered circuits and converters.
  • Suitable for half-bridge and full-bridge topologies.
  • Designed for synchronous rectifier applications.
  • Works in DC/DC and AC/DC converter designs.

IRFB7440PBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the IRFB7440PBF?

The IRFB7440PBF is housed in a TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

Is the IRFB7440PBF RoHS compliant?

Yes, the IRFB7440PBF is RoHS compliant and lead-free.

What is the maximum drain current for the IRFB7440PBF?

The maximum continuous drain current is 120A, limited by the package.

What is the typical on-resistance of this MOSFET?

The typical on-resistance is 2.0mΩ, with a maximum of 2.5mΩ at Vgs=10V and Id=100A.

What is the gate threshold voltage for the IRFB7440PBF?

The maximum gate threshold voltage is 3.9V at Id=100µA.

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