| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The IRFB61N15DPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 150V and a continuous drain current of 60A at 25°C case temperature. The static drain-to-source on-resistance is typically 32 mΩ at VGS = 10V, enabling low conduction losses.
This MOSFET is characterized for fast switching with a total gate charge of 95 nC typical and low gate-to-drain charge. Capacitance parameters are fully specified, including effective output capacitance, to simplify design in high-frequency circuits. The device is avalanche-rated with a single pulse avalanche energy of 520 mJ.
The IRFB61N15DPBF is housed in a TO-220AB through-hole package, suitable for easy mounting on heatsinks. It is lead-free and listed as RoHS3 compliant. Typical applications include high-frequency DC-DC converters, motor control, and uninterruptible power supplies.
150V maximum.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C junction temperature.
Yes, it is listed as RoHS3 compliant, but this is unverified.
Maximum 32 mΩ at VGS=10V, ID=36A.