| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,970 pcs
|
4970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The IRFB5620PBF is an N-Channel MOSFET from Infineon Technologies, utilizing advanced MOSFET technology. It is designed for Class-D audio amplifier applications, offering low on-resistance and optimized gate charge for improved efficiency and reduced total harmonic distortion. Key electrical specifications include a drain-source voltage rating of 200V, a continuous drain current of 25A at 25°C case temperature, and a maximum on-resistance of 72.5 mOhm at 15A and 10V gate drive. The typical on-resistance is 60 mOhm at 10V. The device has a maximum gate charge of 38 nC at 10V and a typical gate charge of 25 nC, along with an input capacitance of 1710 pF at 50V. The gate threshold voltage is a maximum of 5V at 100µA. The MOSFET is through-hole mounted in a TO-220-3 package (TO-220AB) and operates over a junction temperature range of -55°C to 175°C. Its maximum power dissipation is 144W at 25°C case temperature. These characteristics make it suitable for high-power switching applications, particularly in Class-D audio amplifiers, power supplies, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.86 | $2.86 |
| 10+ | $1.53 | $1.53 |
| 100+ | $1.34 | $1.34 |
| 500+ | $1.11 | $1.11 |
| 1,000+ | $1.02 | $1.02 |
| 2,000+ | $1.00 | $1.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C (junction).
RoHS3 compliant according to available data, but unverified.
25 nC (typical) at 10V.
72.5 mOhm at 15A/10V, typical 60 mOhm.
Maximum 5V at 100µA.