| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,017 pcs
|
6017 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
64 pcs
|
64 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon IRFB52N15DPBF is an N-channel HEXFET Power MOSFET suitable for applications such as high-frequency DC-DC converters and plasma display panels. It is designed to reduce switching losses due to its low gate-to-drain charge.
Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 150V and a continuous Drain Current (Id) of 51A at 25°C. The On-Resistance (Rds(on)) is a maximum of 32mΩ at 10V gate-to-source voltage. The device features fully characterized capacitance, including effective Coss, to simplify design. It also offers fully characterized avalanche voltage and current.
This MOSFET is available in a TO-220AB package, facilitating through-hole mounting. The operating junction and storage temperature range is -55°C to +175°C. The lead-free designation indicates compliance with environmental standards.
Applications benefit from its low gate charge, which helps reduce switching losses. The fully characterized capacitance simplifies circuit design, and the characterized avalanche performance ensures robustness.
150V.
TO-220AB.
-55°C to +175°C.
32mΩ at VGS=10V.
51A at case temperature 25°C.
60nC.