| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFB52N15DPBF is an N-Channel power MOSFET from Infineon Technologies featuring HEXFET technology. It is designed for high-frequency DC-DC converters and plasma display panels. With a maximum drain-source voltage of 150V and continuous drain current of 51A at 25°C, it offers low on-resistance of 32mOhm at 10V gate drive. The device features low gate-to-drain charge to reduce switching losses. Fully characterized capacitance includes effective Coss to simplify design. The MOSFET is avalanche-rated with a minimum avalanche voltage of 200V. It is housed in a through-hole TO-220AB package with a junction-to-case thermal resistance of 0.47°C/W. The operating junction temperature range is -55°C to 175°C. The device is lead-free verified from the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.67 | $3.67 |
| 10+ | $1.89 | $1.89 |
| 100+ | $1.64 | $1.64 |
| 500+ | $1.46 | $1.46 |
| 2,000+ | $1.30 | $1.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V maximum.
Through-hole TO-220-3 (TO-220AB).
-55°C to 175°C junction temperature.
The device is marked as RoHS3 compliant (unverified) and lead-free verified from datasheet.
32mOhm maximum at 36A, 10V.
89nC maximum.