| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,702 pcs
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2702 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
33 pcs
|
33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon IRFB4710PBF is a HEXFET Power MOSFET designed for high-frequency DC-DC converters, motor control, and uninterruptible power supplies. It features a 100V drain-source breakdown voltage and a maximum continuous drain current of 75A at 25°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.014 Ohm, low gate-to-drain charge for reduced switching losses, and fully characterized capacitance. The device operates over a wide temperature range from -55°C to +175°C.
Available in TO-220AB, D2Pak, and TO-262 packages, the IRFB4710PBF is suitable for various power management applications. Its design benefits include fully characterized avalanche voltage and current, simplifying integration into power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 75A at 25°C and 53A at 100°C.
The drain-source breakdown voltage is 100V.
The maximum on-state resistance is 0.014 Ohm.
The operating and storage temperature range is -55°C to +175°C.
The IRFB4710PBF is available in TO-220AB, D2Pak, and TO-262 packages.
Yes, the IRFB4710PBF is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.