IRFB4410PBF N-Channel MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 88A continuous drain current. Features low on-resistance of 10mOhm max at 10V gate drive.
Mfr Part #:

IRFB4410PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 88A continuous drain current. Features low on-resistance of 10mOhm max at 10V gate drive.
✓ Total Stock: 3,406 pcs
$ Price Range: $0.92 - $2.96

IRFB4410PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,800 pcs
1800 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,606 pcs
1606 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB4410PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFB4410PBF Description

Short technical summary and product information.

The IRFB4410PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications.

 

Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 88A at 25°C (63A at 100°C), and a maximum on-resistance of 10mOhm at 58A and 10V gate drive (typical 8mOhm). The gate charge is 180nC at 10V, and input capacitance is 5150pF at 50V drain-source. The device can handle pulsed drain currents up to 380A and has a maximum power dissipation of 200W at 25°C case temperature.

 

The MOSFET is housed in a TO-220AB (TO-220-3) through-hole package, suitable for standard PCB mounting. It operates over a junction temperature range of -55°C to 175°C. The part is lead-free and RoHS3 compliant.

 

Typical applications include high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, high-speed power switching, and hard-switched or high-frequency circuits.

IRFB4410PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: IRFB4410PBF N-Channel MOSFET, 100V, 88A, TO-220AB
Subcategory: N-Channel MOSFET

IRFB4410PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB4410PBF Estimated Pricing

Qty Low High
1+ $2.96 $2.96
10+ $1.72 $1.72
100+ $1.32 $1.32
500+ $1.06 $1.06
1,000+ $0.98 $0.98
2,000+ $0.92 $0.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB4410PBF Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current up to 88A at 25°C.
  • Low on-resistance: 10mOhm max at 58A, 10V.
  • TO-220AB through-hole package.
  • Lead-free and RoHS3 compliant.

IRFB4410PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply applications.
  • High speed power switching circuits.
  • Hard switched and high frequency circuits.

IRFB4410PBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V maximum.

What package does the IRFB4410PBF come in?

TO-220-3 (TO-220AB) through-hole package.

What is the operating junction temperature range?

-55°C to 175°C.

Is the IRFB4410PBF RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the typical on-resistance?

8mOhm typical, 10mOhm maximum at 58A, 10V.

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